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notes through are on page 8 www.irf.com 1 IRFB260NPBF smps mosfet hexfet power mosfet v dss r ds(on) max i d 200v 0.040 ? 56a pd - 95473 to-220ab parameter max. units i d @ t c = 25c continuous drain current, v gs @ 10v 56 i d @ t c = 100c continuous drain current, v gs @ 10v 40 a i dm pulsed drain current 220 p d @t c = 25c power dissipation 380 w linear derating factor 2.5 w/c v gs gate-to-source voltage 20 v dv/dt peak diode recovery dv/dt 10 v/ns t j operating junction and -55 to + 175 t stg storage temperature range soldering temperature, for 10 seconds 300 (1.6mm from case ) c mounting torqe, 6-32 or m3 screw 10 lbf?in (1.1n?m) absolute maximum ratings high frequency dc-dc converters benefits applications low gate-to-drain charge to reduce switching losses fully characterized capacitance including effective c oss to simplify design, (see app. note an1001) fully characterized avalanche voltage and current thermal resistance parameter typ. max. units r jc junction-to-case ??? 0.40 r cs case-to-sink, flat, greased surface 0.50 ??? c/w r ja junction-to-ambient ??? 62 lead-free
IRFB260NPBF 2 www.irf.com parameter min. typ. max. units conditions g fs forward transconductance 29 ??? ??? s v ds = 50v, i d = 34a q g total gate charge ??? 150 220 i d = 34a q gs gate-to-source charge ??? 24 37 nc v ds = 160v q gd gate-to-drain ("miller") charge ??? 67 100 v gs = 10v t d(on) turn-on delay time ??? 17 ??? v dd = 100v t r rise time ??? 64 ??? i d = 34a t d(off) turn-off delay time ??? 52 ??? r g = 1.8 ? t f fall time ??? 50 ??? v gs = 10v c iss input capacitance ??? 4220 ??? v gs = 0v c oss output capacitance ??? 580 ??? v ds = 25v c rss reverse transfer capacitance ??? 140 ??? pf ? = 1.0mhz c oss output capacitance ??? 5080 ??? v gs = 0v, v ds = 1.0v, ? = 1.0mhz c oss output capacitance ??? 230 ??? v gs = 0v, v ds = 160v, ? = 1.0mhz c oss eff. effective output capacitance ??? 500 ??? v gs = 0v, v ds = 0v to 160v dynamic @ t j = 25c (unless otherwise specified) ns parameter typ. max. units e as single pulse avalanche energy ??? 450 mj i ar avalanche current ??? 34 a e ar repetitive avalanche energy ??? 38 mj avalanche characteristics s d g parameter min. typ. max. units conditions i s continuous source current mosfet symbol (body diode) ??? ??? showing the i sm pulsed source c urrent integral reverse (body diode) ??? ??? p-n junction diode. v sd diode forward voltage ??? ??? 1.3 v t j = 25c, i s = 34a, v gs = 0v t rr reverse recovery time ??? 240 360 ns t j = 25c, i f = 34a q rr reverse recoverycharge ??? 2.1 3.2 c di/dt = 100a/s t on forward turn-on time intrinsic turn-on time is negligible (turn-on is dominated by l s +l d ) diode characteristics 56 220 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 200 ??? ??? v v gs = 0v, i d = 250a ? v (br)dss / ? t j breakdown voltage temp. coefficient ??? 0.26 ??? v/c reference to 25c, i d = 1ma r ds(on) static drain-to-source on-resistance ??? ??? 0.040 ? v gs = 10v, i d = 34a v gs(th) gate threshold voltage 2.0 ??? 4.0 v v ds = v gs , i d = 250a ??? ??? 25 a v ds = 200v, v gs = 0v ??? ??? 250 v ds = 160v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 20v gate-to-source reverse leakage ??? ??? -100 na v gs = -20v i gss i dss drain-to-source leakage current
IRFB260NPBF www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20s pulse width tj = 25c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) 4.5v 20s pulse width tj = 175c vgs top 15v 10v 8.0v 7.0v 6.0v 5.5v 5.0v bottom 4.5v 3.0 5.0 7.0 9.0 11.0 13.0 15.0 v gs , gate-to-source voltage (v) 1.00 10.00 100.00 1000.00 i d , d r a i n - t o - s o u r c e c u r r e n t ( ) t j = 25c t j = 175c v ds = 15v 20s pulse width -60 -40 -20 0 20 40 60 80 100 120 140 160 180 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 10v 56a
IRFB260NPBF 4 www.irf.com fig 8. maximum safe operating area fig 6. typical gate charge vs. gate-to-source voltage fig 5. typical capacitance vs. drain-to-source voltage fig 7. typical source-drain diode forward voltage 0 30 60 90 120 150 0 2 5 7 10 12 q , total gate charge (nc) v , gate-to-source voltage (v) g gs i = d 34a v = 40v ds v = 100v ds v = 160v ds 0.0 0.5 1.0 1.5 2.0 v sd , source-todrain voltage (v) 0.10 1.00 10.00 100.00 1000.00 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 175c v gs = 0v 1 10 100 1000 v ds , drain-tosource voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec 1 10 100 1000 v ds , drain-to-source voltage (v) 10 100 1000 10000 100000 c , c a p a c i t a n c e ( p f ) coss crss ciss v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd
IRFB260NPBF www.irf.com 5 fig 10a. switching time test circuit v ds 90% 10% v gs t d(on) t r t d(off) t f fig 10b. switching time waveforms
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+ - fig 11. maximum effective transient thermal impedance, junction-to-case fig 9. maximum drain current vs. case temperature 25 50 75 100 125 150 175 0 10 20 30 40 50 60 t , case temperature ( c) i , drain current (a) c d 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response)
IRFB260NPBF 6 www.irf.com q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - fig 13b. gate charge test circuit fig 13a. basic gate charge waveform fig 12c. maximum avalanche energy vs. drain current fig 12b. unclamped inductive waveforms fig 12a. unclamped inductive test circuit t p v (br)dss i as r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 25 50 75 100 125 150 175 0 170 340 510 680 850 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 14a 24a 34a
IRFB260NPBF www.irf.com 7 p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period + - + + + - - - fig 14. for n-channel hexfet power mosfets
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IRFB260NPBF 8 www.irf.com data and specifications subject to change without notice. this product has been designed and qualified for the industrial market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 7/04 repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.78mh r g = 25 ? , i as = 34a. i sd 34, di/dt 480a/s, v dd v (br)dss , t j 175c
pulse width 300s; duty cycle 2%. c oss eff. is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss lead assignments 1 - gate 2 - drain 3 - source 4 - drain - b - 1.32 (.052) 1.22 (.048) 3x 0.55 (.022) 0.46 (.018) 2.92 (.115) 2.64 (.104) 4.69 (.185) 4.20 (.165) 3x 0.93 (.037) 0.69 (.027) 4.06 (.160) 3.55 (.140) 1.15 (.045) min 6.47 (.255) 6.10 (.240) 3.78 (.149) 3.54 (.139) - a - 10.54 (.415) 10.29 (.405) 2.87 (.113) 2.62 (.103) 15.24 (.600) 14.84 (.584) 14.09 (.555) 13.47 (.530) 3x 1.40 (.055) 1.15 (.045) 2.54 (.100) 2x 0.36 (.014) m b a m 4 1 2 3 notes: 1 dimensioning & tolerancing per ansi y14.5m, 1982. 3 outline conforms to jedec outline to-220ab. 2 controlling dimension : inch 4 heatsink & lead measurements do n ot include burrs. hexfet 1- gate 2- drain 3- source 4- drain lead assignments igbts, copack 1- gate 2- collector 3- emitter 4- collector

example: in t he as s e mbl y line "c" t his is an irf 1010 lot code 1789 as s emb le d on ww 19, 1997 part number as s e mb l y lot code dat e code ye ar 7 = 1997 line c week 19 logo rectifier int e r nat ional note: "p" in assembly line position indicates "lead-free"
note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/

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